New Developments in Semiconductor ResearchNova Publishers, 2005 - 231 sayfa This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components; dopant incorporation; growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; and in situ monitoring of epitaxial growth processes. Also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined, including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. structures incorporating Langmuir-Blodgett films; resists, lithography and metalisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package-related failure mechanisms; and effects of operational and environmental stresses on reliability. |
İçindekiler
| 1 | |
Nitride VerticalCavity SurfaceEmitting Diode Lasers Problems to be Solved | 67 |
Electrical Properties of inhomogeneous Schottky Diodes | 113 |
Theory of Internal Photoemission in Heterojunctions and the Characterization of Long Wavelength SIGeSI Hip Infrared Photodetectors | 139 |
Interface Heterobond Effects in Hkl InAsGaSb Superlattices Solved by Modified Bond Orbital Model | 177 |
Growth and NonDestructive Characterization of Cd1yZnyTe Crystals Grown by a Modified Vertical Bridgman Method | 197 |
| 227 | |
Sık kullanılan terimler ve kelime öbekleri
absorption active region Appl applied assumed band barrier height bias bottom calculated carrier concentration changes cm³ coefficient concentration conduction confinement consideration considered crystals curves decrease density dependence determined device dimensions diode direction dislocation distribution doping concentration effect electrical Electron energy equal excitation Figure followed gain grown growth higher holes increase indices inhomogeneity injection intensity interface junction laser lasing layer Lett losses lower mass materials measurements mechanisms method mirrors mode nitride VCSELS obtained operation optical oxide aperture p-type parameters peak Phys physical plotted position possible potential presented properties proposed quantum radial recombination reduced relatively reported resistivity resonator respectively sample Schottky semiconductor shown shows simulation structure superlattice Table temperature thermal thickness threshold transmission uniform upper values voltage wafers wave wavelength yield